View IRFI520N_318494.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 9.1362A
PRELIMINARY
IRFI520N
D
HEXFET(R) Power MOSFET
l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
VDSS = 100V
G S
RDS(on) = 0.20 ID = 7.6A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Current Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
7.6 5.3 38 30 0.20 20 91 5.7 3.0 5.0 -55 to + 175 300 (1.6mm from case) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient
Min.
---- ----
Typ.
---- ----
Max.
5.0 65
Units
C/W 3/16/98
IRFI520N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance
Min. 100 --- --- 2.0 2.7 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.11 --- --- --- --- --- --- --- --- --- --- 4.5 23 32 23
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.20 VGS = 10V, ID = 4.3A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 5.7A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 25 ID = 5.7A 4.4 nC VDS = 80V 11 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 5.7A ns --- RG = 22 --- RD = 8.6, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH from package --- 7.5 --- and center of die contact 330 --- VGS = 0V 92 --- VDS = 25V pF 54 --- = 1.0MHz, See Fig. 5 12 --- = 1.0MHz
D
G
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 99 390 7.6 A 38 1.3 150 580 V ns nC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 4.3A, VGS = 0V TJ = 25C, IF = 5.7A di/dt = 100A/s
D
G S
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. t=60s, =60Hz
Uses IRF520N data and test conditions
VDD = 25V, starting TJ = 25C, L = 4.7mH
RG = 25, IAS = 5.7A. (See Figure 12)
ISD 5.7A, di/dt 240A/s, VDD V(BR)DSS,
TJ 175C
IRFI520N
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
I , D rain-to-S ource C urrent (A ) D
10
I , D rain-to-S ource C urrent (A ) D
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
4.5V 20 s P U LS E W ID TH T C = 175C
0.1 1 10 100
4.5V 20 s P U LS E W ID TH TC = 25C
0.1 1 10 100
1
A
1
A
V D S , D rain-to-S ource V oltage (V )
V D S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
R D S (on ) , D rain-to-S ource O n R esistance (N orm alized)
I D = 9.5A
I D , D ra in -to-S o urc e C urren t (A )
2.5
2.0
T J = 2 5 C
10
TJ = 1 7 5 C
1.5
1.0
0.5
1 4 5 6 7
V DS = 5 0V 2 0 s P U L S E W ID T H
8 9 10
A
0.0 -60 -40 -20 0 20 40 60 80
V G S = 10V
100 120 140 160 180
A
V G S , G a te -to -S o u rc e V o lta g e (V )
T J , Junction T em perature (C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRFI520N
600 20
500
V G S , G ate-to-S ource V oltage (V )
C iss
V GS C is s C rs s C oss
= = = =
0V , f = 1M H z C gs + C gd , Cds S H O R TE D C gd C ds + C gd
I D = 5.7A
16
V D S = 80V V D S = 50V V D S = 20V
C , C apacitanc e (pF )
400
12
300
C oss
8
200
C rs s
4
100
0 1 10 100
A
0 0 5 10
FO R TE S T C IR C U IT S E E FIG U R E 13
15 20 25
A
V D S , D rain-to-S ource V oltage (V )
Q G , Total G ate C harge (nC )
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
O P E R A TIO N IN TH IS A R E A LIM ITE D B Y R D S (on)
10 s
I S D , R everse D rain C urrent (A )
I D , D rain C urrent (A )
10 100 s
TJ = 175C
10
TJ = 25C
1m s 1 10m s
1 0.4 0.6 0.8 1.0
V G S = 0V
1.2
A
0.1 1
T C = 25C T J = 175C S ingle P ulse
10 100
A
1000
1.4
V S D , S ource-to-D rain V oltage (V )
V D S , D rain-to-S ource V oltage (V )
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRFI520N
8.0
VDS VGS RG
RD
D.U.T.
+
I D , Drain Current (A)
6.0
-VDD
10V
4.0
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
2.0
VDS 90%
0.0 25 50 75 100 125 150 175
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
1
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFI520N
L
E A S , S ingle P ulse A valanc he E nergy (m J)
VDS D.U.T. RG + 10 V
200
TO P
160
B O TTO M
ID 2.3A 4.0A 5.7A
VDD
IAS tp
0.01
120
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp VDD VDS
80
40
0
V D D = 25V
25 50 75 100 125 150
A
175
S tarting T J , Junction T em perature (C )
IAS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRFI520N
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
D.U.T
+
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
IRFI520N
Package Outline
TO-220 FullPak Outline Dimensions are shown in millimeters (inches)
10.60 (.417) 10.40 (.409) o 3.40 (.133) 3.10 (.123) -A3.70 (.145) 3.20 (.126) 4.80 (.189) 4.60 (.181) 2.80 (.110) 2.60 (.102) LE A D A S S IG N ME N TS 1 - G A TE 2 - D R A IN 3 - SOURCE
7.10 (.280) 6.70 (.263)
16.00 (.630) 15.80 (.622)
1.15 (.045) M IN . 1 2 3
NOTES: 1 D IME N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982 2 C O N TR O LLIN G D IM E N S IO N : IN C H .
3.30 (.130) 3.10 (.122) -B13.70 (.540) 13.50 (.530) C D
A 1.40 (.055) 3X 1.05 (.042) 2.54 (.100) 2X 0.90 (.035) 3X 0.70 (.028) 0.25 (.010) M AM B 3X 0.48 (.019) 0.44 (.017)
B
2.85 (.112) 2.65 (.104)
M IN IM U M C R E E P A G E D IS TA N C E B E TW E E N A -B -C -D = 4.80 (.189)
Part Marking Information
TO-220 FullPak
E X A M P L E : T H IS IS A N IR F I8 4 0 G W ITH A S S E M B L Y LOT COD E E401
A
IN T E R N A T IO N A L R E C T IF IE R LOGO ASSEMBLY LOT CODE
PART NUMBER IR F I8 4 0 G
E 40 1 92 45
D ATE CO DE (Y Y W W ) Y Y = YE A R W W = W EEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 3/98

▲Up To Search▲

Price & Availability of IRFI520N

	To Download IRFI520N Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .